features z z fast switching speed. z wide aso. ? 2SC2073 pb free plating product 2SC2073 npn silicon epitaxial power transistor pb 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters package dimension base 1 collector 2 3 emitter to-220c 1. base 2. collector 3. emitter 1 2 3 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 z complements the 2sa940. wide safe operationg area. maximum rating operating temperature range app lies unless otherwise specified symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current 1.5 a i b base crrent 0.5 a p c collector dissipation t a =25 t c =25 1.5 25 w t j, t stg junction and storage temperature -55 to +150
? 2SC2073 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 electrical characteristics ratings at 25 ambient temperature unless otherwise specified. parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo i c =100 a,i e =0 150 v collector-emitter breakdown voltage v (br) ceo i c =1ma,i b =0 150 v emitter-base breakdown voltage v (br) ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =120v,i e =0 10 a emitter cut-off current i ebo v eb =5v,i c =0 10 a dc current gain h fe v ce =10v,i c =0.5a 40 75 140 collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =50ma 1.5 v base-emitter on voltage v be(on) v ce =10v ,i c =0.5a 0.65 0.85 v transition frequency f t v ce =10v, i c =0.5a 4 mhz collector output capacitance c ob v cb =10v,i e =0, f=1mhz 35 pf typical characteristics @ ta=25 unless otherwise specified
? 2SC2073 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3
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